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Nov 11, 2024
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ELT 141 Transistor Fundamentals Lecture Hours: 3 Lab Hours: 3 Credits: 4
Introduces semiconductor physics and the fundamental principles of diodes and bipolar transistors. Promotes and supports sustainable and green technologies.
Corequisite: ELT 132 ; or consent of instructor. Student Learning Outcomes:
- Identify a diode symbol and show proper bias polarity for forward and reverse operation.
- Identify the six standard DC biasing circuits for bipolar junction transistors and calculate the DC voltage and current parameters.
- Apply appropriate test equipment for measuring voltage and current parameters around bipolar transistors.
Content Outline
- Semiconductor Physics
- Atomic structure
- Energy bands and levels
- Conduction in crystals
- Doping
- Diodes
- PN junction
- Reverse bias
- Diode curve
- Approximations
- Diode resistance
- Introduction to Bipolar Transistors
- Junction biasing
- Relationship of DC Alpha/Beta and AC Beta
- Transistor characteristic curves
- Output collector curves (IC-VCE)
- IC versus VBE Curves
- Beta versus IC
- Beta versus temperature
- Saturation and cutoff regions
- Transistor Switches
- Collector-emitter saturation voltage (VCE)
- Collector saturation current (IC sat)
- Base saturation current (IB sat)
- Base-emitter saturation voltage (VBE sat)
- Collector-emitter saturation resistance (R,C-E sat)
- Bipolar transistor switching circuits
- Biasing Stability for Linear Operation
- Beta and temperature effects on transistor operation
- Bias configurations
- Simple base bias
- Base bias/emitter feedback
- Collector feedback bias
- Collector feedback bias/emitter feedback
- Voltage divider bias
- Application of Thevenin’s Theorem
- Emitter bias/two supplies
- Amplifier Configurations (Mid-Frequency Operation Only)
- Common emitter
- Common collector
- Darlington pair
- Common base
- Clippers and Clampers
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