ELT 141 Transistor Fundamentals

Lecture Hours: 3
Lab Hours: 3
Credits: 4

Introduces semiconductor physics and the fundamental principles of diodes and bipolar transistors. Promotes and supports sustainable and green technologies.

Corequisite: ELT 132; or consent of instructor.
Student Learning Outcomes:

Identify a diode symbol and show proper bias polarity for forward and reverse operation.
Identify the six standard DC biasing circuits for bipolar junction transistors and calculate the DC voltage and current parameters.
Apply appropriate test equipment for measuring voltage and current parameters around bipolar transistors.

Content Outline

Semiconductor Physics
- Atomic structure
- Energy bands and levels
- Conduction in crystals
- Doping
Diodes
- PN junction
  - Forward bias
- Reverse bias
- Diode curve
- Approximations
- Diode resistance
  - Static
  - Dynamic
Introduction to Bipolar Transistors
- Junction biasing
- Relationship of DC Alpha/Beta and AC Beta
- Transistor characteristic curves
  - Output collector curves (IC-VCE)
  - IC versus VBE Curves
  - Beta versus IC
  - Beta versus temperature
  - Saturation and cutoff regions
Transistor Switches
- Collector-emitter saturation voltage (VCE)
- Collector saturation current (IC sat)
- Base saturation current (IB sat)
- Base-emitter saturation voltage (VBE sat)
- Collector-emitter saturation resistance (R,C-E sat)
- Bipolar transistor switching circuits
Biasing Stability for Linear Operation
- Beta and temperature effects on transistor operation
- Bias configurations
  - Simple base bias
  - Base bias/emitter feedback
  - Collector feedback bias
  - Collector feedback bias/emitter feedback
  - Voltage divider bias
  - Application of Thevenin’s Theorem
  - Emitter bias/two supplies
Amplifier Configurations (Mid-Frequency Operation Only)
- Common emitter
- Common collector
- Darlington pair
- Common base
Clippers and Clampers